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Power F-MOS FETs
2SK3048
www..com Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
9.90.3 4.60.2 2.90.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.00.5
3.20.1
13.70.2 4.20.2
1.40.2 1.60.2 0.80.1
3.00.5
2.60.1
0.550.15
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 30 3 6 22.5 35 2 150 -55 to +150 Unit V V A A mJ W C C
1 2
2.540.3 3 5.080.5
1: Gate 2: Drain 3: Source TO-220D Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 5mH, IL = 3A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VDD = 200V, ID = 2A VGS = 10V, RL = 100 Conditions VDS = 480V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A IDR = 3A, VGS = 0 750 VDS = 20V, VGS = 0, f = 1MHz 80 25 15 25 90 40 1.5 600 2 1.7 2.5 -1.5 5 2.5 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time
1
Power F-MOS FETs
Area of safe operation (ASO)
100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC 10ms 100ms 60 Non repetitive pulse
2SK3048
PD Ta
10 (1) TC=Ta (2) Without heat sink
IAS L-load
TC=25C
Allowable power dissipation PD (W)
www..com TC=25C
Drain current ID (A)
Avalanche current IAS (A)
50
3 22.5mJ
t=10s 100s 1ms
40
1
30 (1) 20
0.3
10 (2) 0 0 20 40 60 80 100 120 140 160
0.1
0.1
0.3
1
3
10
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
L-load (mH)
ID VDS
6 6
ID VGS
35 VDS=25V TC=25C 5
VDS VGS
TC=25C
VGS=10V
Drain to source voltage VDS (V)
Drain current ID (A)
6V 7V
5
30
Drain current ID (A)
25
4
5.5V
4
20
3 5V 2 40W 1 4.5V 4V 0 0 5 10 15 20 25
3
15
2
10 ID=3A 2A 1A 0 5 10 15 20 25 30
1 TC=125C 85C 0 0 2 4 6 8 10 12 0C 25C
5
0
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
RDS(on) ID
Drain to source ON-resistance RDS(on) ()
6 7
| Yfs | ID
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Ciss, Coss, Crss VDS
VDS=25V 1000 f=1MHz TC=25C Ciss 300
Forward transfer admittance |Yfs| (S)
VGS=10V 5 TC=125C
6
5 TC=0C 25C 85C 125C
4
85C 3 25C
4
100 Coss 30 Crss 10
3
2
2
0C 1
1
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
0
20
40
60
80
100
Drain current ID (A)
Drain current ID (A)
Drain to source voltage VDS (V)
2
Power F-MOS FETs
VDS, VGS Qg
400 14 150
2SK3048
td(on), tr, tf, td(off) ID
VDD=200V VGS=10V TC=25C
www..com
300 12
Switching time td(on),tr,tf,td(off) (ns)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
125
250 VDS
VDS=100V 200V VGS
10
100 td(off) 75
200
8
150
6
50
100
4
tf tr
50
2
25 td(on) 0 0 1 2 3 4 5
0 0 5 10 15 20 25
0
Gate charge amount Qg (nC)
Drain current ID (A)
Rth(t) t
102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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